FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 1 march 2013 FCB20N60F n-channel superfet ? frfet ? mosfet 600 v, 20 a, 190 m features ? 650v @t j = 150c ?typ. r ds(on) = 150 m ? ultra low gate charge (typ. q g = 75 nc) ? low effective output capacitance (typ. c oss .eff = 165 pf) ? 100% avalanche tested ? rohs compliant application ? lighting ? solar inverter ? ac-dc power supply description superfet ? mosfet is fairch ild semiconductor ? ?s first genera- tion of high voltage super-junction (s j) mosfet family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance. this technology is tai- lored to minimize conduction lo ss, provide superior switching performance, dv/dt rate and higher avalanche energy. conse- quently, superfet mosfet is very suitable for the switching power applications such as pfc, server/telecom power, fpd tv power, atx power and industrial power applications. superfet frfet ? mosfet?s optimized body diode reverse recovery per- formance can remove additional component and improve system reliability. mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCB20N60F unit v dss drain to source voltage 600 v i d drain current -continuous (t c = 25 o c) 20 a -continuous (t c = 100 o c) 12.5 i dm drain current - pulsed (note 1) 60 a v gss gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 690 mj i ar avalanche current (note 1) 20 a e ar repetitive avalanche energy (note 1) 20.8 mj dv/dt peak diode recovery dv/dt (note 3) 50 v/ns p d power dissipation (t c = 25 o c) 208 w - derate above 25 o c1.67w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FCB20N60F unit r jc thermal resistance, junction to case, max 0.6 o c/w r ja * thermal resistance, junction to ambient, max* 40 r ja thermal resistance, junction to ambient, max 62.5 g s d d g s * when mounted on the minimum pad size recommended (pcb mount)
FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FCB20N60F FCB20N60Ftm d 2 -pak 330mm 24m 800 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v,i d = 250 a, t c = 25 o c 600 - - v v gs = 0 v,i d = 250 a, t c = 150 o c- 650 - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.6-v/ o c bv ds drain-source avalanche breakdown voltage v gs = 0 v, i d = 20 a - 700 - v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v - - 1 a v ds = 480 v, v gs = 0 v, t c = 125 o c- - 10 i gss gate to body leakage current v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10 v, i d = 10 a - 0.15 0.19 g fs forward transconductance v ds = 40 v, i d = 10 a (note 4) -17-s c iss input capacitance v ds = 25 v, v gs = 0 v f = 1.0 mhz - 2370 3080 pf c oss output capacitance - 1280 1665 pf c rss reverse transfer capacitance - 95 - pf c oss output capacitance v ds = 480 v, v gs = 0 v, f = 1.0 mhz - 65 85 pf c oss eff. effective output capacitance v ds = 0 v to 400 v, v gs = 0 v - 165 - pf t d(on) turn-on delay time v dd = 300 v, i d = 20 a r g = 25 (note 4, 5) - 62 135 ns t r turn-on rise time - 140 290 ns t d(off) turn-off delay time - 230 470 ns t f turn-off fall time - 65 140 ns q g(tot) total gate charge at 10v v ds = 480 v, i d = 20 a, v gs = 10 v (note 4, 5) -7598nc q gs gate to source gate charge - 13.5 18 nc q gd gate to drain ?miller? charge - 36 - nc i s maximum continuous drain to source diode forward current - - 20 a i sm maximum pulsed drain to source diode forward current - - 60 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 20 a - - 1.4 v t rr reverse recovery time v gs = 0 v, i sd = 20 a di f /dt = 100 a/ s (note 4) - 160 - ns q rr reverse recovery charge - 1.1 - c notes: 1. repetitive rating: pulse width li mited by maximum junction temperature 2. i as = 10 a, v dd = 50 v, r g = 25 , starting t j = 25 c 3. i sd 20 a, di/dt 1200 a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 0 10 1 10 2 * note: 1. v ds = 40v 2. 250 s pulse test -55 o c 150 o c 25 o c i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.0 0.1 0.2 0.3 0.4 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 25 o c 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050607080 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc]
FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 s * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.6 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms
FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 7 mechanical dimensions d 2 pak dimensions in millimeters
FCB20N60F n-channel mosfet ?2008 fairchild semiconductor corporation FCB20N60F rev. c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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